Liner formation in 3DIC structures

ABSTRACT

An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.

This application claims the benefit of U.S. Provisional Application No.61/223,977 filed on Jul. 8, 2009, entitled “Liner Formation in 3DICStructures,” which application is hereby incorporated herein byreference.

TECHNICAL FIELD

This invention relates generally to integrated circuit structures, andmore particularly to through-silicon vias, and even more particularly tothe formation of liners for the through-silicon vias.

BACKGROUND

Since the invention of integrated circuits, the semiconductor industryhas experienced continuous rapid growth due to constant improvements inthe integration density of various electronic components (i.e.,transistors, diodes, resistors, capacitors, etc.). For the most part,this improvement in integration density has come from repeatedreductions in the minimum feature size, allowing more components to beintegrated into a given chip area.

These integration improvements are essentially two-dimensional (2D) innature, in that the volume occupied by the integrated components isessentially on the surface of the semiconductor wafer. Although dramaticimprovements in lithography have resulted in considerable improvementsin 2D integrated circuit formation, there are physical limitations tothe density that can be achieved in two dimensions. One of theselimitations is the minimum size needed to make these components. Also,when more devices are put into one chip, more complex designs arerequired.

An additional limitation comes from the significant increase in thenumber and length of interconnections between devices as the number ofdevices increases. When the number and length of interconnectionsincrease, both circuit RC delay and power consumption increase.

Efforts for resolving the above-discussed limitations commonly includethe use of three-dimensional integrated circuits (3DICs) and stackeddies. Through-silicon vias (TSVs) are often used in 3DICs and stackeddies for connecting dies. In this case, TSVs are used to connect theintegrated circuits on a die to the backside of the die. In addition,TSVs are also used to provide a short grounding path to connect theground in the integrated circuits to the backside of the die, which istypically covered by a grounded aluminum film.

Typically, the formation of TSVs includes forming TSV openings, formingTSV liners in the TSV openings, and filling metallic materials into theremaining portion of the TSV openings. TSV openings often have highaspect ratios, for example, greater than about 7. It is thus difficultto form conformal TSV liners. FIGS. 1A through 1G illustrate aconventional process for forming TSV liners, which process comprisesmultiple etch and re-deposition cycles. Referring to FIG. 1A, TSVopening 102 is formed in substrate 100. In FIG. 1B, TSV liner 104 isdeposited on sidewalls of TSV opening 102 using chemical vapordeposition (CVD). It is noted that portions of TSV liner 104 close tothe top portion of TSV opening 102 are very thick, while portions of TSVliner 104 close to the bottom portion of TSV opening 102 are very thin,or do not exist at all. With such a profile of TSV liner 104, it isdifficult to fill a metallic material into TSV opening 102. Therefore,as shown in FIG. 1C, an etch-back is performed to reduce the thicknessof TSV liner 104, particularly the top portion of TSV liner 104. Asecond deposition is then performed, as shown in FIG. 1D. FIGS. 1E, 1Fand 1G illustrate the repeated etch-back and deposition of TSV liner104. The above-discussed process has the effect of increasing theconformity of TSV liner 104. However, even with the repeated etch-backand re-deposition cycles, the sidewall coverage of TSV liner 104 isstill unsatisfactory. Particularly, the bottom portions of TSV liner 104are often much thinner than the top portions, especially in TSV openingshaving very high aspect ratios.

In the above-discussed cycles, sub-atmospheric chemical vapor deposition(SACVD) may also be used to deposit TSV liner 104. The profile of theresulting liner is better than when it is formed using CVD. However, thecost of SACVD is high. In addition, the SACVD can only be used todeposit SiO₂, which has a k value of 3.9. It cannot be used to formlow-k dielectric layers.

Accordingly, new TSV formation processes are needed to form TSV linershaving better coverage without incurring additional manufacturing cost.

SUMMARY OF THE INVENTION

In accordance with one aspect of the present invention, an integratedcircuit structure includes a semiconductor substrate; athrough-semiconductor via (TSV) opening extending into the semiconductorsubstrate; and a TSV liner in the TSV opening. The TSV liner includes asidewall portion on a sidewall of the TSV opening and a bottom portionat a bottom of the TSV opening. The bottom portion of the TSV liner hasa bottom height greater than a middle thickness of the sidewall portionof the TSV liner.

Other embodiments are also disclosed.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention, and theadvantages thereof, reference is now made to the following descriptionstaken in conjunction with the accompanying drawings, in which:

FIGS. 1A through 1G illustrate cross-sectional views of intermediatestages in the manufacturing of a conventional liner in a through-siliconvia (TSV) opening, wherein etch-back and re-deposition cycles areperformed to improve the profile of the liner;

FIGS. 2-4 and 7-10 illustrate a process for forming a TSV in accordancewith an embodiment;

FIGS. 5 and 6 illustrate a spin-on coating process; and

FIG. 11 illustrates a cross-sectional view of a portion of a wafer inaccordance with an embodiment, wherein a TSV extends into inter-metaldielectrics.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments are discussed in detail below.It should be appreciated, however, that the embodiments provide manyapplicable inventive concepts that can be embodied in a wide variety ofspecific contexts. The specific embodiments discussed are merelyillustrative of specific ways to make and use the invention, and do notlimit the scope of the invention.

A novel process for forming through-substrate vias (TSVs, also known asthrough-silicon vias or through-semiconductor vias) is provided. Theintermediate stages in the manufacturing of an embodiment areillustrated. The variations of the embodiments are discussed. Throughoutthe various views and illustrative embodiments of the present invention,like reference numbers are used to designate like elements.

Referring to FIG. 2, wafer 2, which includes substrate 10, is provided.Substrate 10 may be a semiconductor substrate, such as a bulk siliconsubstrate, although it may include other semiconductor materials such asgroup III, group IV, and/or group V elements. Integrated circuit device12 (symbolized by transistor 12), which may include devices such astransistors, resistors, capacitors, and the like, may be formed at thetop surface (the surface facing up in FIG. 2) of substrate 10.Inter-layer dielectric (ILD) 14 is formed over integrated circuit device12 and substrate 10. Contact plugs 16 are formed in ILD 14 and connectedto integrated circuit device 12.

A photo resist (not shown) is then applied on ILD 14 and patterned.Referring to FIG. 3, a first etch is performed using the photo resist toform TSV opening 18, which extends from the top surface of ILD 14 intosubstrate 10. The bottom of TSV opening 18 should be lower than thebottoms of shallow trench isolation (STI) regions (not shown) in wafer2. TSV opening 18 may be formed by, for example, dry etch, althoughother methods such as laser drilling may also be used. After theformation of TSV opening 18, the photo resist is removed. TSV opening 18may have an aspect ratio (the ratio of depth D to width W) greater thanabout 7, greater than about 8, or even greater than about 10.

Next, as shown in FIG. 4, TSV liner 20 (also commonly known as aninsulation layer) is formed. The formation details of TSV liner 20 arediscussed with reference to FIGS. 5 and 6. In an embodiment, theformation of TSV liner 20 is performed using spin-on coating. Thespin-on coating process involves spraying a chemical, which is flowable,on wafer 2, and rotating wafer 2. In an exemplary embodiment, thechemical includes tetra-ethyl-ortho-silicate (TEOS),methyltriethoxysilane (MTES), or combinations thereof. The chemical maygo through a SOL-GEL process to form a polymer, which process results inan increase in the cross-links in the chemical. The chemical in the formof a polymer is then dissolved in a solvent. In an exemplary embodiment,the solvent comprises ethanol, isopropyl alcohol, acetone, ether,tetrahydrofuran (THF), and/or the like. The solvent is easy toevaporate. The evaporation of the solvent affects the formation of TSVliner 20, and with the evaporation of the solvent, the viscosity of thechemical increases. The evaporation rate of the chemical, after thesolvent is added, may be measured using equilibrium vapor pressure. Inan embodiment, at the time the chemical is sprayed on wafer 2 (FIG. 5),the equilibrium vapor pressure is greater than about 3 pound per squareinch (psi).

Referring to FIG. 5, wafer 2 is placed on chuck 24. Wafer 2 is thenrotated so that chemical 28 is spread, as shown in FIG. 6. In anembodiment, wafer 2 may be rotated at a low speed, for example, betweenabout 200 revolutions per minute (RPM) and about 250 RPM. At the timewafer 2 is rotated, the chemical (denoted as chemical 28 hereinafter) isdispensed onto wafer 2 through nozzle 30. To uniformly dispense chemical28, nozzle 30 may shift in position during the dispensing.

After the dispensing of chemical 28, wafer 2 may stop rotating, or mayrotate at a very low speed, for example, less than about 100 RPM for aperiod of time. Depending on the composition of chemical 28 and variousother conditions, the period of time may last more than about 10seconds, and may be between about 10 seconds and about one minute,before wafer 2 starts spinning again. It is realized, however, that theabove-mentioned data are merely examples, and optimal values may befound through experiments. During the period of time, the chemical flowsdown to the bottom of TSV opening 18 (refer to FIG. 4). In the meantime,with the evaporation of the solvent, chemical 28 starts to shape on thesidewall of TSV opening 18. Over time, some of chemical 28 flows to thebottom of TSV opening 18, and some stays on the sidewall of TSV opening18.

After the period of time ends, wafer 2 is rotated again at a high speed,for example, between about 500 RPM and about 3,000 RPM, and excesschemical 28 is spun off wafer 2. Next, a soft bake is performed, forexample, at about 140° C., for between about 0.5 minutes and about 15minutes. A hard bake is also performed, for example, at about 350° C.,for between about 0.5 minutes and about 60 minutes. As a result, thedried and baked chemical 28 forms TSV liner 20 (FIG. 4).

It is observed that various factors may affect the conformity and thesidewall coverage of TSV liner 20. For example, if the solvent has a lowevaporation rate, then chemical 28 is slow to shape, and more chemical28 will flow to the bottom of TSV opening 18 (FIG. 4), or may even fullyfill TSV opening 18, rather than staying on the sidewall of TSV opening18. Conversely, if the solvent has a high evaporation rate, then morechemical 28 will stay on the top portion of the sidewall of TSV opening18 (FIG. 4), rather than flowing to the bottom portion of the sidewalland the bottom of TSV opening 18. This will result in the top portion ofTSV liner 20 being thicker than the bottom portion. The period of timeduring which wafer 2 stops spinning also has an effect on the profile ofTSV liner 20, with a longer period of time causing more chemical 28 toflow to the bottom, and a shorter period of time causing inadequateamounts of chemical 28 to flow to the bottom portion of the sidewall ofTSV opening 18. Further, there are other relevant factors, such as theflowing rate of nitrogen introduced into the chamber in which wafer 2 islocated, and the temperature of wafer 2 when the chemical is dispensedand when wafer 2 spins. A higher flowing rate of hydrogen and a highertemperature of wafer 2 result in less chemical 28 flowing to the bottomof TSV opening 18, while a lower flowing rate of hydrogen and a lowertemperature of wafer 2 result in more chemical 28 flowing to the bottomof TSV opening 18, and less remaining on the top portion of thesidewall. In addition to the above-discussed factors, other factors suchas the composition of chemical 28, the spin speed, the spin time, thebaking temperature, and the like all affect the profile of TSV liner 20,and experiments are needed to obtain optimum results.

Referring back to FIG. 4, with the formation conditions of TSV liner 20carefully controlled, the conformity of TSV liner 20 is high. Experimentresults have revealed that the sidewall portion of TSV liner 20 has atop thickness T_(top), a middle thickness T_(middle), and a bottomthickness T_(bottom), with the differences between any two ofthicknesses T_(top), T_(middle), and T_(bottom) being less than about 10percent of any of thicknesses T_(top), T_(middle), and T_(bottom).Thicknesses T_(top), T_(middle), and T_(bottom) are measured atlocations close to the top, the middle, and the bottom of TSV opening18, respectively. Further, thickness T_(middle) is close to, but may beslightly greater than, thickness T_(top), while thickness T_(bottom) isclose to, but may be slightly greater than, thickness T_(middle). Thethicknesses of the sidewall portion of TSV liner 20 may increasecontinuously, but slightly, from top to bottom.

In addition, the bottom of TSV opening 18 is filled with TSV liner 20,wherein the filled portion has height H that is between about 5 percentand about 20 percent of the depth D of TSV opening 18. The ratio H/D mayalso be close to about 10 percent. In addition, depth D is greater thanany of thicknesses T_(top), T_(middle), and T_(bottom), with ratios ofH/T_(middle), H/T_(top), or H/T_(bottom) being greater than about 2, oreven greater than about 5. The bottom portion of TSV liner 20, which isat the bottom of TSV opening 18, may have a U-shaped top surface 31,with a radius R of any portion of top surface 31 being greater thanabout 10 percent, 20 percent, or even 30 percent of bottom width W′ ofTSV opening 18.

The material and k value of TSV liner 20 may be adjusted by adjustingthe material of chemical 28 (FIG. 5). With the use of TEOS, theresulting TSV liner 20 comprises silicon dioxide, which has a k value of3.9. With the use of MTES, the resulting TSV liner 20 has a low k value,which may be lower than about 3.5, or even lower than about 2.5. Byadjusting the percentage of TEOS and MTES in the compound chemical 28,the k value may be adjusted to a desirable value. If a lower k value isdesirable, then the percentage of MTES may be increased. Otherwise, thepercentage of TEOS may be increased.

After the formation of TSV liner 20, as shown in FIG. 7, diffusionbarrier layer 32, also sometimes referred to as a glue layer, is blanketformed on TSV liner 20 and covering the sidewalls and the bottom of TSVliner 20. Diffusion barrier layer 32 may include titanium, titaniumnitride, tantalum, tantalum nitride, or combinations thereof, and can beformed using physical vapor deposition, sputtering, and the like. It isobserved that with thickness T_(middle) (FIG. 4) of the sidewall portionof TSV liner 20 being no less than thickness T_(top), it is easier toform diffusion barrier layer 32 with good conformity.

Next, the remaining portion of TSV opening 18 is filled with a metallicmaterial, and hence TSV 34 is formed. The formation process of TSV 34 isknown in the art, and hence is not discussed in detail herein. Thematerial of TSV 34 may include copper, aluminum, and/or other conductivematerials.

FIG. 8 illustrates the overlying structures on top of TSV 34, whichincludes interconnect structure 36. Interconnect structure 36 mayinclude metal lines and vias (not shown) formed in dielectric layers,which may be low-k dielectric layers. The metal lines and vias may beelectrically connected to TSV 34. Interconnect structure 36 may alsoinclude passivation layers, bond pads (not shown), and the like.

Referring to FIG. 9, the top surface of wafer 2 may be mounted oncarrier wafer 40, for example, through adhesive 42. The back end of TSV34 is then grinded, and the bottom portion of TSV liner 20 is removed.In subsequent process steps, the backside interconnect structures, whichmay include redistribution line (RDL) 50 and contact pad 52, may beformed on the backside of wafer 2, as shown in FIG. 10.

In the embodiments discussed in preceding paragraphs, TSV 34 is formedusing a via-first approach, and is formed before the formation of abottom metallization layer (commonly known as M1). Accordingly, TSV 34only extends into ILD 14, but not into the overlying IMDs ininterconnect structure 36. In alternative embodiments, as shown in FIG.11, TSV 34 is formed using a via-last approach, and is formed after theformation of interconnect structure 36. Accordingly, TSV 34 penetratesthrough ILD 14 and interconnect structure 36 and extends into substrate10. Similarly, TSV liner 20 is formed on the sidewalls of the TSVopening in which TSV 34 is located, and electrically insulates TSV 34from substrate 10. The subsequent process for forming the backsideinterconnect structure is essentially the same as shown in FIG. 10, andhence is not repeated herein.

It is appreciated that although TSV liner 20 is used as an example toexplain the concept of the embodiments, the embodiment may apply to theformation of liners of other openings, such as trenches or via openings.One skilled in the art will be able to determine the processes byincorporating the teaching provided in preceding paragraphs. Theembodiments are particularly suitable for forming liners in openingshaving very high aspect ratios.

The embodiments have several advantageous features. With the use ofspin-on coating, the TSV liners may have better conformity than whenformed using other methods. The bottom and sidewall coverage is alsobetter than for those formed using CVD. The process time and cost arelow. Further, the k values of the TSV liners are adjustable.

Although the present invention and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps. In addition, eachclaim constitutes a separate embodiment, and the combination of variousclaims and embodiments are within the scope of the invention.

1. An integrated circuit structure comprising: a semiconductor substratecomprising a through-semiconductor via (TSV) opening extending into thesemiconductor substrate; and a dielectric liner in the TSV opening,wherein the dielectric liner comprises a sidewall portion on a sidewallof the TSV opening and a bottom portion at a bottom of the TSV opening,wherein a top surface of the bottom portion of the dielectric liner isrounded, with a radius greater than about 20 percent of a bottom widthof the TSV opening, and wherein the bottom portion of the dielectricliner has a height greater than a thickness of the sidewall portion ofthe dielectric liner.
 2. The integrated circuit structure of claim 1,wherein a ratio of the height of the bottom portion to the thickness ofthe sidewall portion is greater than about
 2. 3. The integrated circuitstructure of claim 1, wherein the radius is greater than about 30percent of the bottom width of the TSV opening.
 4. The integratedcircuit structure of claim 1, wherein the dielectric liner has a k valuesmaller than about 3.5.
 5. The integrated circuit structure of claim 1further comprising a barrier layer on the dielectric liner, and aconductive material on the barrier layer.
 6. The integrated circuitstructure of claim 5, wherein the conductive material comprises copper.7. An integrated circuit structure comprising: a substrate comprising anopening extending into the substrate, wherein the opening has an aspectratio greater than about 6; and a dielectric liner in the opening,wherein the dielectric liner comprises a sidewall portion on a sidewallof the opening and a bottom portion on a bottom of the opening, andwherein all thicknesses of the sidewall portion are no greater than aheight of the bottom portion.
 8. The integrated circuit structure ofclaim 7, wherein the thicknesses of the sidewall portion increasecontinuously from upper portions to lower portions.
 9. The integratedcircuit structure of claim 7, wherein the substrate comprises a siliconsubstrate, wherein the integrated circuit structure further comprises aninter-layer dielectric (ILD) over the silicon substrate, and wherein theopening extends to a top surface of the ILD.
 10. The integrated circuitstructure of claim 7, wherein a ratio of the height of the bottomportion to a thickness of the sidewall portion is greater than about 2.11. The integrated circuit structure of claim 7, wherein the dielectricliner has a k value smaller than about 3.5.
 12. The integrated circuitstructure of claim 7 further comprising a barrier layer on thedielectric liner, and a conductive material on the barrier layer. 13.The integrated circuit structure of claim 12, wherein the conductivematerial comprises copper.